发明名称 |
A FUSE BOX OF A SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF |
摘要 |
A fuse box of semiconductor device and a fabrication method thereof are provided to prevent physical attacks to adjacent fuse wires in a fuse wire cutting process by using a curved fuse defense hole between fuse wires and a fuse defense wall for filling the fuse defense hole. A fuse buffer material(110) is formed on a semiconductor substrate(100). A fuse support layer(210) is formed on the semiconductor substrate having the fuse buffer material. Two fuse wires are arranged in parallel to each other on the fuse support layer. A fuse protection layer(260) is used for covering the fuse wires and is formed on the fuse support layer. A fuse defense hole(390) is installed between the fuse wires and penetrates the fuse protection layer and the fuse support layer. A fuse defense wall(480) is used for filling the fuse defense hole and is projected from a top face of the fuse protection layer. The fuse defense hole has curved sidewalls and a groove formed in an exposed part of the fuse buffer material. |
申请公布号 |
KR20050033772(A) |
申请公布日期 |
2005.04.13 |
申请号 |
KR20030069695 |
申请日期 |
2003.10.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG, MIN SUNG;OH, KYUNG SEOK;PARK, JOO SUNG;SHIN, JUNG HYUN |
分类号 |
H01L21/82;H01L23/525;(IPC1-7):H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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