| 摘要 |
A method for forming a storage node electrode of a capacitor is provided to minimize the thickness of a photoresist pattern and to enhance the capacitance by using multiple-layered storage node contact holes. A first interlayer dielectric(22) is formed on a substrate(21) defined by cell and peripheral regions(C,D). By etching the first interlayer dielectric using a first photoresist pattern, a first storage node contact hole(c1) and a metal line contact hole(c2) are simultaneously formed in the cell and peripheral region, respectively. A first tungsten plug and a second tungsten plug(23b) are filled in first storage node and metal line contact holes. A second interlayer dielectric(24) is formed on the resultant structure. By etching the second interlayer dielectric using a second photoresist pattern, a second storage node contact hole(c3) is formed to expose the first tungsten plug. The exposed first tungsten plug is removed. Then, a storage node electrode is formed in the first and second storage node contact hole.
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