发明名称 |
Stacked structure for parallel capacitors and method of fabrication |
摘要 |
A monolithic integrated circuit including a capacitor structure. In one embodiment the integrated circuit includes at least first and second levels of interconnect conductor for connection to a semiconductor layer and a stack of alternating conductive and insulative layers formed in vertical alignment with respect to an underlying plane. The stack is formed between the first and second levels of conductor. Preferably the stack includes a first conductive layer, a first insulator layer formed over the first conductive layer, a second conductive layer formed over the first insulative layer, a second insulator layer formed over the second conductive layer, and a third conductive layer formed over the second insulative layer, with the first and third conductive layers commonly connected. |
申请公布号 |
GB2371147(B) |
申请公布日期 |
2005.04.13 |
申请号 |
GB20010021201 |
申请日期 |
2001.08.31 |
申请人 |
* AGERE SYSTEMS GUARDIAN CORPORATION |
发明人 |
ALLEN * YEN;FRANK YAUCHEE * HUI;YIFEN WINSTON * YAN |
分类号 |
H01L23/52;H01L21/02;H01L21/3205;H01L21/768;H01L21/822;H01L23/522;H01L27/04;(IPC1-7):H01L21/02 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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