发明名称 |
Methods of forming source/drain regions using multilayer side wall spacers and structures so formed |
摘要 |
Methods of forming a source/drain region can include the steps of forming a gate electrode on a substrate and forming a lightly doped source/drain region in the substrate self-aligned to the gate electrode. A first spacer can be formed on a side wall of the gate electrode. A second spacer can be formed on the first spacer on the side wall separate from the first spacer to provide a multilayer spacer on the side wall. A heavily doped source/drain region can be formed in the substrate self-aligned to the multilayer spacer. Related structures are also disclosed.
|
申请公布号 |
US6878597(B2) |
申请公布日期 |
2005.04.12 |
申请号 |
US20030397970 |
申请日期 |
2003.03.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DO-HYUNG |
分类号 |
H01L21/28;H01L21/336;(IPC1-7):H01L21/336;H01L21/320;H01L21/44;H01L29/76 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|