Method of manufacturing a wafer

摘要

A method of manufacturing a wafer. The surface of a wafer for which a lapping process is completed is exposed to a caustic etch process so that the etch rate against the surface of the wafer ranges from about 0.3 to about 0.7 mum/min using an etchant containing from about 42 to about 48% KOH and from about 52 to about 58% H2O. Then, a wafer back side polishing process is controlled in order to prevent a sliding phenomenon without a drop in a chucking voltage. Therefore, a lift-off or peeling phenomenon of a subsequently deposited film is reduced and local variations in the etch rate is also reduced.