发明名称 |
Method of fabricating barrierless and embedded copper damascene interconnects |
摘要 |
A method for forming at least one barrierless, embedded metal structure comprising the following steps. A structure having a patterned dielectric layer formed thereover with at least one opening exposing at least one respective portion of the structure. Respective metal structures are formed within each respective opening. The first dielectric layer is removed to expose the top and at least a portion of the side walls of the respective at least one metal structure. A dielectric barrier layer is formed over the structure and the exposed top of the respective metal structure. A second, conformal dielectric layer is formed over the dielectric barrier layer to complete the respective barrierless at least one metal structure embedded within the second, conformal dielectric layer. The dielectric barrier layer preventing diffusion of the metal comprising the respective at least one metal structure into the second, conformal dielectric layer.
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申请公布号 |
US6878621(B2) |
申请公布日期 |
2005.04.12 |
申请号 |
US20030346382 |
申请日期 |
2003.01.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WU ZHEN-CHENG;LI LAIN-JONG;LU YUNG-CHEN;JANG SYUN-MING |
分类号 |
H01L21/768;(IPC1-7):H01L21/44;H01L21/476 |
主分类号 |
H01L21/768 |
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