CLEANING SOLUTION FOR PHOTORESIST AND METHOD FOR FORMING PATTERN USING THE SAME

摘要

A composition for a photoresist cleaning solution which is used at the end of a pattern developing process is provided to prevent the disintegration of patterns owing to its increased surface tension and thus to improve the stability of a patterning process. The composition for a photoresist cleaning solution comprises water as a main component and a surfactant comprising a compound represented by formula 1, in which R is H, an alkyl group having C8-20 or an alkylaryl group; m is an integer of 5-50; and n is an integer of 3-50, wherein the composition further comprises an alcohol compound.