| 摘要 |
A conductive structure for gate lines and local interconnects in microelectronic devices. The conductive structure can be used in memory cells for SRAM devices or other types of products. The memory device cell can comprise a first conductive line, a second conductive line, a first active area, a second active area, a third active area, and a fourth active area. The first conductive line includes a first gate, a second gate, a first contact and a second contact. The second conductive line includes a third gate, a fourth gate, a third contact and a fourth contact. The first active area is electrically coupled to the first gate and the third contact; the second active area is electrically coupled to the second gate and the fourth contact; the third active area is electrically coupled to the third gate and the first contact; and the fourth active area is electrically coupled to the fourth gate and the second contact. The memory cell device, for example, can be a cell for an SRAM device. As such, other embodiments of memory devices further include a first access transistor electrically coupled to the second conductive line, and a second access transistor electrically coupled to the first conductive line.
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