发明名称 Approach for zero dummy byte flash memory read operation
摘要 A nonvolatile memory device, in a continuous read operation, requires no dummy bytes between receipt of a read command and commencement of a scanning out of a first target data byte. The highest order bits of a range of possible target data bytes are speculatively read while only a partial set of the highest order address bits are received. The proper set of highest order target data bits is available and scanned out at a time a complete target data address is received. During this scan out time, the remainder of the target data byte is read and prepared for scanning out starting at the next highest order bit. In this way, the data byte targeted by a read command is available immediately and continuously after receipt of the full read command and address.
申请公布号 US6879535(B1) 申请公布日期 2005.04.12
申请号 US20040929899 申请日期 2004.08.30
申请人 ATMEL CORPORATION 发明人 PERISETTY SRINIVAS
分类号 G11C7/00;G11C7/10;G11C16/26;(IPC1-7):G11C7/00 主分类号 G11C7/00
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