发明名称 |
Method for manufacturing silicon wafer |
摘要 |
Provided is a process for manufacturing a silicon wafer employing heat treatment which is applied on the silicon wafer in inert gas atmosphere represented by Ar annealing to annihilate Grown-in defects in a surface layer region of the silicon wafer as well as to cause no degradation of haze and micro-roughness on a surface thereof. In a process for manufacturing a silicon wafer having a step of heat treating the silicon wafer in inert gas atmosphere, using a purge box with which the silicon wafer heat treated in the inert gas atmosphere can be unloaded to outside a reaction tube of a heat treatment furnace without being put into contact with the open air, the purge box is filled with mixed gas of nitrogen and oxygen or 100% oxygen gas, and the heat treated silicon wafer is unloaded into the purge box. |
申请公布号 |
US6878645(B2) |
申请公布日期 |
2005.04.12 |
申请号 |
US20030332576 |
申请日期 |
2003.01.10 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
KOBAYASHI NORIHIRO;AKIYAMA SHOJI;TAMATSUKA MASARO;SHINOMIYA MASARU;MATSUMOTO YUICHI |
分类号 |
H01L21/205;H01L21/322;H01L21/324;(IPC1-7):H01L21/26;H01L21/42;H01L21/477 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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