发明名称 Dielectric cure for reducing oxygen vacancies
摘要 A unique electrochemical process fills oxygen vacancies in dielectrics while reducing oxidation of nearby electrodes and conductors. Preferably, an electromagnetic field or bias is applied to a dielectric. The bias causes oxygen vacancies in the dielectric to migrate to the surface of the dielectric. As the oxygen vacancies migrate toward the surface, oxygen ions fill the oxygen vacancies. In one embodiment, a unique plasma treatment provides the oxygen ions that react with the oxygen vacancies. In another embodiment, a unique electrolysis treatment provides the oxygen ions that react with the oxygen vacancies.
申请公布号 US6878602(B2) 申请公布日期 2005.04.12
申请号 US20030443490 申请日期 2003.05.22
申请人 MICRON TECHNOLOGY INC. 发明人 BASCERI CEM;SANDHU GURTEJ S.
分类号 H01L21/02;H01L21/3105;(IPC1-7):H01L21/20 主分类号 H01L21/02
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