| 摘要 |
A method for fabricating a semiconductor device is provided to obtain a perpendicular side wall of a metal wiring and an anti-reflective coating after etching and to bury an interlayer dielectric without voids by etch a second anti-reflective coating in a specified etch condition. A metal wiring layer(120) is formed on a structure of a semiconductor substrate. First anti-reflective coatings(130,140) and a second anti-reflective coating(150) are sequentially formed on the metal wiring layer. A photoresist pattern is formed on the second anti-reflective coating. The second anti-reflective coating, the first anti-reflective coatings and the metal wiring layer are etched respectively in a different etch condition by using the photoresist pattern as a mask.
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