Methods for chemical formation of thin film layers using short-time thermal processes

摘要

A method is provided for forming a thin film layer of a substrate. The method includes the steps of forming a thin surface layer containing a dopant material on the substrate, and short-time thermal processing of the doped surface layer with processing parameters selected to produce a reaction between the surface layer and the dopant material to form a dielectric film, a metal film or a silicide film. In one embodiment, short-time thermal processing is implemented by flash rapid thermal processing of the doped surface layer. In another embodiment, short-time thermal processing is implemented by sub-melt laser processing of the doped surface layer. The process may be used for forming dielectric layers having a thickness of 50 angstroms or less.