发明名称 |
Method to solve via poisoning for porous low-k dielectric |
摘要 |
A method of forming a via in a low-k dielectric material and without the attendant via poisoning problem, or a dual damascene structure formed in the same dielectric and without the same problem are disclosed. The vertical walls of the via opening are first lined with a low-k protection layer and then covered with a barrier layer in order to prevent outgassing from the low-k dielectric material when copper is deposited into the via opening. In the case of a dual damascene structure, it is sufficient that the hole opening underlying the trench opening is first lined with the low-k protection layer. The resulting via or dual damascene structure is free of poisoned metal and, therefore, more reliable.
|
申请公布号 |
US6878615(B2) |
申请公布日期 |
2005.04.12 |
申请号 |
US20010863224 |
申请日期 |
2001.05.24 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TSAI MING-HSING;LIN JING-CHENG;SHUE SHAU-LIN;YU CHEN-HUA |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|