发明名称 |
Magnetoresistive device and magnetic memory device |
摘要 |
There are provided a magnetoresistive effect element having a satisfactory magnetic characteristic and a magnetic memory device including this magnetoresistive effect element to produce excellent write/read characteristics.A magnetoresistive effect element 1 has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to produce a magnetoresistive change by a current flowing to the direction perpendicular to the film plane, the magnetization free layer having a normalized resistance ranging from 2000 Omeganm<2 >to 10000 Omeganm<2 >where a product of a specific resistance obtained when a current flows to the film thickness direction of the magnetization free layer 7 and a film thickness is defined as the normalized resistance. A magnetic memory device includes this magnetoresistive effect element 1 and bit lines and word lines sandwiching the magnetoresistive effect element 1.
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申请公布号 |
US6879473(B2) |
申请公布日期 |
2005.04.12 |
申请号 |
US20040486737 |
申请日期 |
2004.02.11 |
申请人 |
SONY CORPORATION |
发明人 |
SONE TAKEYUKI;BESSHO KAZUHIRO;HOSOMI MASANORI;MIZUGUCHI TETSUYA;OHBA KAZUHIRO;YAMAMOTO TETSUYA;HIGO YUTAKA;KANO HIROSHI |
分类号 |
G01R33/09;G11C11/15;G11C11/16;H01F10/32;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11B5/39 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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