发明名称 Systems and methods to determine seed layer thickness of trench sidewalls
摘要 One aspect of the present invention relates to a method to facilitate formation of seed layer portions on sidewall surfaces of a trench formed in a substrate. The method involves the steps of forming a conformal seed layer over a barrier layer disposed conformal to a trench, wherein the trench is formed in the substrate; reflecting a light beam of x-ray radiation at the seed layer sidewall portions; generating a measurement signal based on the reflected portion of the light beam; and determining a thickness of the sidewall portions based on the measurement signal while the sidewall portions are being formed over the trench.
申请公布号 US6879051(B1) 申请公布日期 2005.04.12
申请号 US20020050454 申请日期 2002.01.16
申请人 ADVANCED MICRO DEVICES, INC. 发明人 SINGH BHANWAR;TEMPLETON MICHAEL K.;RANGARAJAN BHARATH;SUBRAMANIAN RAMKUMAR
分类号 C23C16/04;C23C16/52;H01L21/31;(IPC1-7):H01L21/31 主分类号 C23C16/04
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