发明名称 |
Systems and methods to determine seed layer thickness of trench sidewalls |
摘要 |
One aspect of the present invention relates to a method to facilitate formation of seed layer portions on sidewall surfaces of a trench formed in a substrate. The method involves the steps of forming a conformal seed layer over a barrier layer disposed conformal to a trench, wherein the trench is formed in the substrate; reflecting a light beam of x-ray radiation at the seed layer sidewall portions; generating a measurement signal based on the reflected portion of the light beam; and determining a thickness of the sidewall portions based on the measurement signal while the sidewall portions are being formed over the trench.
|
申请公布号 |
US6879051(B1) |
申请公布日期 |
2005.04.12 |
申请号 |
US20020050454 |
申请日期 |
2002.01.16 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SINGH BHANWAR;TEMPLETON MICHAEL K.;RANGARAJAN BHARATH;SUBRAMANIAN RAMKUMAR |
分类号 |
C23C16/04;C23C16/52;H01L21/31;(IPC1-7):H01L21/31 |
主分类号 |
C23C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|