发明名称 |
Method to control critical dimension of a hard masked pattern |
摘要 |
A method of reducing the critical dimension (CD) of a hard mask by a wet etch method is described. An oxide hard mask is treated with a H2SO4/H2O2 (SPM) solution followed by treatment with a NH4OH/H2O2/H2O (APM) solution to trim the CD by 0 to 20 nm. With nitride or oxynitride hard masks, a buffered HF dip is inserted prior to the SPM treatment. For oxide hard masks, the SPM solution performs the etch while APM solution assists in removing plasma etch residues. With oxynitride hard masks, the APM performs the etch while BHF and SPM solutions remove plasma etch residues. The hard mask pattern can then be transferred with a dry etch into an underlying polysilicon layer to form a gate length of less than 150 nm while controlling the CD to within 3 to 5 nm of a targeted value.
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申请公布号 |
US6878646(B1) |
申请公布日期 |
2005.04.12 |
申请号 |
US20020272082 |
申请日期 |
2002.10.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
TSAI CHAO-TZUNG;WU JIA-SHENG;FANG FUXUAN |
分类号 |
H01L21/033;H01L21/28;H01L21/302;H01L21/311;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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