| 摘要 |
An offset line to substantially cancel the capacitive coupling effects of a select line to a memory cell. When the select line transitions to cause a stored memory state in the memory cell to be placed onto a sense line, capacitive coupling from the select line to the sense line is substantially cancelled by capacitive coupling, of an opposite polarity, from an offset line to the sense line. Without the opposing effects of the offset line, the capacitive coupling from the select line would raise the pre-charge voltage level on the sense line, which would then require a longer time to discharge down to the input threshold of a sense gate that detects the stored state that was in the memory cell.
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