发明名称 |
Power MOSFET semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device includes a semiconductor substrate of a first conductivity type, on which a semiconductor layer having a trench extending in the depth direction toward the semiconductor substrate is formed. A first region of the first conductivity type is formed in the depth direction along one side of the trench in the semiconductor layer and contacts the semiconductor substrate. A second region of the first conductivity type is formed in a surface area of the semiconductor layer and close to the trench and contacts the first region. A third region of the second conductivity type is formed in the surface area of the semiconductor layer. A fourth region of the first conductivity type is formed in a surface area of the third region. A gate insulation film and a gate electrode are provided on the surface of the third region between the second region and the fourth region.
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申请公布号 |
US6878989(B2) |
申请公布日期 |
2005.04.12 |
申请号 |
US20020151900 |
申请日期 |
2002.05.22 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
IZUMISAWA MASARU;KOUZUKI SHIGEO;HODAMA SHINICHI |
分类号 |
H01L21/265;H01L21/336;H01L29/06;H01L29/08;H01L29/78;(IPC1-7):H01L29/732 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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