SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor and a method for fabricating the same are provided to avoid easily the damage due to fluorine without an additional diffusion barrier by blocking basically a metastasis of fluorine. A plurality of metal wirings(5,6,9) formed on the top of a semiconductor substrate(1) are spaced apart from each other. A main interlayer dielectric(11) is formed on the plurality of metal wirings in such a condition that a fluorine is contained therein. A non-containing layer(12) of the fluorine forming a part of the main interlayer dielectric is formed near the surface of the main interlayer dielectric in such a condition that the fluorine is removed in large quantities.