发明名称 |
High performance varactor diodes |
摘要 |
A varactor diode having a first electrode comprising a well region of a first conductivity type in a substrate, a second electrode comprising a first plurality of diffusion regions of a second conductivity type abutting isolation regions disposed in said well region, and a second plurality of diffusion regions of said first conductivity type extending laterally from portions of said first plurality of diffusion regions not adjacent said isolation regions and having a dopant concentration greater than that of said first plurality of diffusion regions. The varactor has a tunability of at least approximately 3.5 in a range of applied voltage between approximately 0V to 3V, an approximately linear change in capacitive value in a range of applied voltage between approximately 0V to 2V, and a Q of at least approximately 100 at a circuit operating frequency of approximately 2 GHz.
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申请公布号 |
US6878983(B2) |
申请公布日期 |
2005.04.12 |
申请号 |
US20030728140 |
申请日期 |
2003.12.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COOLBAUGH DOUGLAS D.;FURKAY STEPHEN S.;HAMMAD MOHAMED YOUSSEF;JOHNSON JEFFREY B. |
分类号 |
H01L27/08;H01L29/93;(IPC1-7):H01L27/108;H01L21/20 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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地址 |
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