发明名称 |
Modified silicon-on-insulator substrate having isolation structure of preventing leakage current and method of fabricating the same |
摘要 |
An integrated circuit structure can include an isolation structure that electrically isolates an active region of an integrated circuit substrate from adjacent active regions and an insulation layer that extends from the isolation structure to beneath the active region. An epitaxial silicon layer extends from the active region through the insulation layer to a substrate beneath the insulation layer. |
申请公布号 |
KR100481868(B1) |
申请公布日期 |
2005.04.11 |
申请号 |
KR20020073869 |
申请日期 |
2002.11.26 |
申请人 |
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发明人 |
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分类号 |
H01L21/76;H01L21/20;H01L21/336;H01L21/762;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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