| 摘要 |
An adhesive film for semiconductor comprises a support film, and adhesive layers formed on both surfaces of the support film, in which each adhesive layer comprises an adhesive having a glass transition temperature of 200° C. or less, a coefficient of linear expansion of 70 ppm or less, and a storage elastic modulus of 3 GPa or less, and the adhesive film has a total thickness of between 43 and 57 mum. A lead frame for semiconductor comprises a lead frame and an adhesive film for semiconductor according to the present invention. A semiconductor device comprises a lead frame and a semiconductor element, in which the lead frame and the semiconductor element are adhered to each other via an adhesive film for semiconductor according to the present invention. |
