| 摘要 |
A silicon thin film cantilever and a method for manufacturing the same are provided to form a cantilever body having a uniform thickness by directly depositing a silicon nitride layer on a silicon substrate. A silicon thin film cantilever includes a cantilever body(20) provided on a silicon substrate(10). A cantilever tip(30) made from multi-crystalline silicon is formed at an upper portion of the cantilever body(20). A silicon nitride layer forming the cantilever body(20) is deposited on the silicon substrate(10) with a uniform thickness through a chemical vapor deposition process. The cantilever tip(30) has a conductive characteristic while generating heat, so the cantilever tip(30) is made from silicon. The height of the cantilever tip(30) is identical to the thickness of the cantilever body(20).
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