| 摘要 |
<p>Bumps electrically connected to elements are formed on the main surface of a wafer on which the elements are formed and grooves with depths which do not reach the back surface of the wafer are formed in the wafer on the main surface side thereof along dicing lines or chip dividing lines of the wafer. The bump forming surface of the wafer is coated with a seal member and a back side grinding process for the wafer is performed to make the wafer thin, and at the same time, divide the wafer into individual chips. One of the chips which are discretely divided by performing the back side grinding process is picked up, the bumps of the picked-up chip are bonded and mounted to and on a base board, and at the same time, the seal member is melted for sealing.</p> |
