SEMICONDUCTOR MEMORY DEVICE ABLE TO READ AND WRITE AT A TIME

摘要

A semiconductor memory device capable of reading and writing simultaneously is provided to apply a read command of another bank at the next clock after a write command of one bank is applied. According to the semiconductor memory device comprising a number of banks, a bank address buffer(210) latches a bank address. An address buffer(220) latches a column address and a row address. A decoder is comprised in each bank, and decodes addresses using the bank address buffer and the address buffer. A memory cell array(300) comprises a number of banks, and stores data. An output data path outputs data stored in the memory cell array to an input/output pin through an output buffer. And an input data path inputs data of an input buffer inputted from the external through the input/output pin to the memory cell array, and is separated from the output data path.