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发明名称
MOS Transistor having multiple channels and method of manufacturing the same
摘要
申请公布号
KR100481209(B1)
申请公布日期
2005.04.08
申请号
KR20020059886
申请日期
2002.10.01
申请人
发明人
分类号
H01L29/78;H01L21/336;H01L21/8234;H01L29/423;H01L29/786;(IPC1-7):H01L29/78
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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