| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which the surface of a silicon substrate can be made flatter by improving a method of flattening the surface of the silicon substrate by forming a sacrificial oxide film on the surface of the substrate and peeling the film. SOLUTION: The flatness of the surface of the silicon substrate can be improved by forming the sacrificial oxide film on the surface through isotropic oxidation, and peeling the oxide film formed through the isotropic oxidation from the surface. At the time of performing the isotropic oxidation, ozone-containing water or a hydrogen peroxide solution can be used or radical oxidation can be used. COPYRIGHT: (C)2005,JPO&NCIPI
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