| 摘要 |
PROBLEM TO BE SOLVED: To enable arrangement of wells of the same conduction type as a buried layer in the periphery circuit in a photoelectric transducer such as CCD having sensor structure or CMOS sensor which has the buried layer in the anode or the cathode of a photodiode, and independently controls each well potential. SOLUTION: On the whole surface on a specified conduction type substrate 101, the buried layer 102 having reverse conduction type to the substrate 101 and an epitaxial layer 103 having the same conduction type as the substrate 101 are arranged. In a part of the epitaxial layer 103, a well 106 having reverse conduction type to the substrate 101 exists. In the photoelectric transducer having the above structure, a buried layer 108 for well separation which has concentration higher than the epitaxial layer 103 and the same conduction type as the substrate 101 is arranged between the well 106 lower part and the buried layer 102. COPYRIGHT: (C)2005,JPO&NCIPI
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