FORMULATION OF A SILICON GERMANIUM-ON INSULATOR STRUCTURE BY OXIDATION OF A BURIED POROUS SILICON LAYER
摘要
A simple and direct method of forming a SiGe-on-insulator that relies on the oxidation of a porous silicon layer (or region) that is created beneath a Ge-containing layer is provided. The method includes the steps of providing a structure comprising a Si-containing substrate having a hole-rich region formed therein and a Ge-containing layer atop the Si-containing substrate; converting the hole-rich region into a porous region; and annealing the structure including the porous region to provide a substantially relaxed SiGe-on-insulator material.
申请公布号
WO2005031810(A2)
申请公布日期
2005.04.07
申请号
WO2004US29378
申请日期
2004.09.10
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;BEDELL, STEPHEN, W.;CHOE, KWANG, SU;FOGEL, KEITH, F.;SADANA, DEVENDRA, K.
发明人
BEDELL, STEPHEN, W.;CHOE, KWANG, SU;FOGEL, KEITH, F.;SADANA, DEVENDRA, K.