Power semiconductor component has 2 opposing emitter zones separated by base zone providing P/N junction with one emitter zone which incorporates island zones of opposing conductivity

摘要

The power semiconductor component has 2 emitter zones (2,3) of opposite conductivity type separated by a base zone (4) with the same conductivity as one of the emitter zones and a weaker doping concentration, for providing a P/N junction (5) with the other emitter zone, which incorporates island zones (6) of opposite conductivity fully embedded in the emitter zone.