| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve performance in microfabrication process of a semiconductor device using active rays or radiation, in particular, KrF excimer laser light, electron beams or EUV light, to provide a positive resist composition having all satisfying high sensitivity, high resolution, favorable pattern figure and favorable dependence on pattern density, and favorable solubility contrast, and to provide a method for forming a pattern by using the composition. <P>SOLUTION: The positive resist composition contains: (A) a resin which contains two kinds of specified repeating units and which is insoluble or hardly soluble with an alkaline developing solution and converted into soluble with an alkaline developing solution by the effect of an acid; (B) a compound which generates sulfonic acid by irradiation with active rays or radiation; and (C) a compound which generates carboxylic acid by irradiation with active rays or radiation. The method for forming a pattern is carried out by using the composition. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
