| 发明名称 |
METHOD OF MANUFACTURING DMOS TRANSISTOR ON SEMICONDUCTOR SUBSTRATE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a DMOS transistor having a small area while exhibiting a high blocking voltage. <P>SOLUTION: A dopant concentration gradient in the lateral direction is formed in a floor region by carrying out at least one dopant implantation from above, wherein this implantation is carried out only for a partial area of the floor region. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
| 申请公布号 |
JP2005094012(A) |
申请公布日期 |
2005.04.07 |
| 申请号 |
JP20040268670 |
申请日期 |
2004.09.15 |
| 申请人 |
ATMEL GERMANY GMBH |
发明人 |
DUDEK VOLKER;GRAF MICHAEL |
| 分类号 |
H01L21/265;H01L21/336;H01L29/06;H01L29/08;H01L29/78;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
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