| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor of a novel structure capable of an improvement of mobility, an increase of a drive current, and of low power consumption by forming a channel region of a novel structure, and to provide its manufacturing method. SOLUTION: The field effect transistor is formed on a substrate, and includes a gate electrode, a source region, a drain region, a channel region disposed in between the source region and the drain region, and at least two or more of moving passages of carriers moving through the channel region. In the field effect transistor, the channel region has a mesh-like structure. COPYRIGHT: (C)2005,JPO&NCIPI |
