| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a compound semiconductor crystal, with which the generation rate of twin crystals in a diameter increasing part of the crystal is suppressed and a single crystal having a low dislocation density can be grown in a high yield in a vertical Bridgman method or a vertical temperature gradient freezing method. SOLUTION: In the apparatus for manufacturing the compound semiconductor single crystal by the vertical Bridgman method or the vertical temperature gradient freezing method, comprising growing the single crystal by arranging a growth vessel 3 having a seed crystal mounting part and the diameter increasing part in heating devices 8, 9 in such a manner that the growth vessel 3 is supported by a supporting member 7, and gradually solidifying a semiconductor melt 4 toward an upper part from a lower part, the supporting member 7 is set to be brought into contact with the whole surface of the outer periphery of the diameter increasing part 3b of the growth vessel, and when the average thickness of the supporting member 7 brought into contact with the diameter increasing part 3b is defined as T, the minimum thickness of the supporting member 7 is larger than the value of T-T/3, and the maximum thickness is smaller than the value of T+T/3 , and preferably, the average thickness T is set to be larger than 10 mm. COPYRIGHT: (C)2005,JPO&NCIPI
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