发明名称 |
[SILICON OXIDE GAP-FILLING PROCESS] |
摘要 |
A silicon oxide gap-filling process is described, wherein a CVD process having an etching effect is performed to fill up a trench with silicon oxide. The reaction gases used in the CVD process include deposition gases and He/H2 mixed gas as a sputtering-etching gas, wherein the percentage of the He/H2 mixed gas in the total reaction gases is raised with the increase of the aspect ratio of the trench.
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申请公布号 |
US2005074946(A1) |
申请公布日期 |
2005.04.07 |
申请号 |
US20030605478 |
申请日期 |
2003.10.02 |
申请人 |
CHU HSIU-CHUAN;HUANG CHIH-AN;TSAI TENG-CHUN;CHEN NENG-KUO |
发明人 |
CHU HSIU-CHUAN;HUANG CHIH-AN;TSAI TENG-CHUN;CHEN NENG-KUO |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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