PLASMA PROCESSING SYSTEM

摘要

A processing system (100) includes a processing chamber (120) having a substrate holder (130) and an electrode (125). The processing system includes a compression control system, a gas supplying system, and a monitor device (160). The electrode (125) is connected to a multi-frequency RF power supply (110) via a matching circuit (115) having a single variable element. The multi-frequency RF power supply is set to a first frequency so as to ignite plasma or set to a second frequency so as to sustain the plasma.