发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To set a pair of bit lines in each set at equal potential simultaneously by a simple structure. <P>SOLUTION: A precharge circuit comprises a precharge power source for setting a pair of bit lines 15 which are spaced apart and extend in parallel with each other at equal potential, a pair of transistors 20 for interrupting the power source to the respective bit lines, and short-circuiting transistors 21 for interrupting the short circuit of both bit lines. Respective gate electrodes 30 of the short-circuiting transistors 21 in each set are integrally connected to a common gate electrode 29 of a first transistor 20a and a second transistor 20b for precharge voltage supply. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005094022(A) 申请公布日期 2005.04.07
申请号 JP20040279774 申请日期 2004.09.27
申请人 OKI ELECTRIC IND CO LTD 发明人 YAMADA HITOSHI;MIYAMOTO SANPEI
分类号 H01L27/108;G11C11/401;G11C11/409;H01L21/8242 主分类号 H01L27/108
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