| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device which can reduce contamination of metal generated in the ashing process. SOLUTION: In the method of manufacturing semiconductor device, an organic film formed on a semiconductor substrate 20 arranged within a chamber 20 is ashed using plasma consisting of the gas including oxygen, and a carbon-containing film 26a consisting of the material including carbon is formed to the internal wall of the chamber 20. COPYRIGHT: (C)2005,JPO&NCIPI |
