发明名称 Direct synthesis of oxide nanostructures of low-melting metals
摘要 The bulk synthesis of highly crystalline noncatalytic low melting metals such as beta-gallium oxide tubes, nanowires, and nanopaintbrushes is accomplished using molten gallium and microwave plasma containing a mixture of monoatomic oxygen and hydrogen. Gallium oxide nanowires were 20-100 nm thick and tens to hundreds of microns long. Transmission electron microscopy (TEM) revealed the nanowires to be highly crystalline and devoid of any structural defects. Results showed that multiple nucleation and growth of gallium oxide nanostructures can occur directly out of molten gallium exposed to appropriate composition of hydrogen and oxygen in the gas phase. These gallium oxide nanostructures are of particular interest for opto-electronic devices and catalytic applications.
申请公布号 US2005072351(A1) 申请公布日期 2005.04.07
申请号 US20030664072 申请日期 2003.09.16
申请人 SUNKARA MAHENDRA KUMAR;SHARMA SHASHANK 发明人 SUNKARA MAHENDRA KUMAR;SHARMA SHASHANK
分类号 C30B1/00;C30B23/00;C30B25/10;C30B29/16;C30B29/60;(IPC1-7):C30B1/00 主分类号 C30B1/00
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