| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a fuse element which can be realized with a lower occupation rate of a fuse area, at a lower cost and moreover with good reproducibility. <P>SOLUTION: The fuse element 5 is formed by connecting in series two or more sets of fuse units Fu1 to Fu3 connecting in parallel the fuses F1 to F3 consisting of a first conductive lead layer, and resistors R1 to R3 consisting of a second conductive lead layer, and is provided on a semiconductor substrate on which circuit elements are arranged. The fuses F1 to F3 are formed in the side far from the upper surface of the semiconductor surface, while the resistors R1 to R3 are formed in an insulating film formed in the side nearer from the upper surface of the semiconductor surface. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
