发明名称 STRUCTURE OF SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To enable remarkable increase of capacitance and microfabrication by making a capacitor of perpendicular structure. <P>SOLUTION: Structure constituted of an electrode material film formed thick to a substrate, a clearance formed narrowly to the thickness of the electrode material film and an insulating film 3 embedded in the clearance is formed. From the structure body, counterelectrodes 4, 5 of lot are formed. Wiring 8 is connected with the counterelectrode through plugged 7, thereby constituting a capacitor. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005093531(A) 申请公布日期 2005.04.07
申请号 JP20030321633 申请日期 2003.09.12
申请人 OKI ELECTRIC IND CO LTD;MIYAGI OKI ELECTRIC CO LTD 发明人 YAJIMA TSUKASA
分类号 H01L21/768;G02F1/1343;H01L21/02;H01L21/822;H01L23/522;H01L27/04;H01L27/06;H01L27/08;(IPC1-7):H01L21/822 主分类号 H01L21/768
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