| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor device of a field emission display. SOLUTION: This device is formed with a patterned first gate metal layer, a first gate insulating layer positioned under the first gate metal layer, a patterned second gate metal layer, and a second gate insulating layer positioned under the second gate metal layer. When the thickness of the gate insulating layer is larger than that of the first gate insulating layer and voltages of the first and second metal layers are higher than that of a threshold voltage, the device is formed so that an absolute voltage of a polysilicon layer channel area positioned under the first gate metal layer is lower than that of polysilicon layer channel area positioned under the second gate metal layer. Consequently, the device can conform to high voltage operation and can be subjected to good protection. COPYRIGHT: (C)2005,JPO&NCIPI
|
