| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a crystal-substrate and an element wherein its cost is made low and the given damage of a crystal substrate by it can be reduced. SOLUTION: By an ion implanting method, hydrogen ions are implanted into a raw-material substrate 100 from its top-surface side, and peeling regions 1 are formed in one-portions of the raw-material substrate 100 whose same depth is predetermined. Subsequently, the raw-material substrate 100 is so heated as to peel from each other the upper and lower layers of the peeling regions 1. Then, the raw-material substrate 100 is so subjected to an annealing processing as to recover the crystallinity of its inside. Next, an epitaxial growth layer 3 is grown on the raw-material substrate 100 by an epitaxial growth method. Then, the epitaxial growth layer 3 and a peeling layer 4 are separated from the raw-material substrate 100. COPYRIGHT: (C)2005,JPO&NCIPI
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