| 摘要 |
PROBLEM TO BE SOLVED: To reduce the gate electrode depletion layer, and to decrease the threshold voltage absolute value. SOLUTION: A channel region is positioned in the surface layer of a silicon substrate 1 and is sandwiched in between N-type source/drain regions 31. A gate insulating film 21, which is a positive charge containing HfO<SB>2</SB>film, is formed directly on the channel region. A metal gate electrode 41, which is a metal film having the Fermi level equivalent to that of the channel region, is formed on the insulating gate 21. COPYRIGHT: (C)2005,JPO&NCIPI
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