METHOD FOR CVD EPITAXIAL GROWTH

摘要

PROBLEM TO BE SOLVED: To provide a method for CVD epitaxial growth by which the concentration of an impurity can be uniformized without rotating a substrate. SOLUTION: In this CVD epitaxial method of SiC, the difference between the temperature of a gas on the upstream side of a substrate and the temperature of the gas on the downstream side of the substrate is adjusted to 0-200°C. In addition, it is preferable that the difference between the central temperature of the gas existing on the substrate and the temperature of the substrate is≤200°C and the central temperature of the gas is≥1,300°C. COPYRIGHT: (C)2005,JPO&NCIPI