发明名称 |
Shallow trench isolation (STI) region with high-K liner and method of formation |
摘要 |
A shallow trench isolation region formed in a layer of semiconductor material. The shallow trench isolation region includes a trench formed in the layer of semiconductor material, the trench being defined by sidewalls and a bottom; a liner within the trench formed from a high-K material, the liner conforming to the sidewalls and bottom of the trench; and a fill section made from isolating material, and disposed within and conforming to the high-K liner. A method of forming the shallow trench isolation region is also disclosed.
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申请公布号 |
US2005073022(A1) |
申请公布日期 |
2005.04.07 |
申请号 |
US20030642916 |
申请日期 |
2003.08.18 |
申请人 |
KARLSSON OLOV B.;WANG HAIHONG;YU BIN;KRIVOKAPIC ZORAN;XIANG QI |
发明人 |
KARLSSON OLOV B.;WANG HAIHONG;YU BIN;KRIVOKAPIC ZORAN;XIANG QI |
分类号 |
H01L21/762;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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