| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a solid-state imaging device where a plurality of kinds of photodiodes having different characteristics are provided and the dopant profile of each kind of a photodiode is adjusted. SOLUTION: A second conductive area is formed on a first conductive semiconductor substrate. In the second conductive area, a plurality of first conductive vertical CCD channels are formed. Over the plurality of vertical CCD channels, a plurality of vertical transfer electrodes are formed to obtain a vertical CCD part together with the plurality of vertical CCD channels. In the second conductive area, a first conductive dopant is injected from a direction of crossing the nomal line direction of the semiconductor substrate to form a first dopant layer. In the second conductive area, the first conductive dopant is injected from a direction of crossing the normal line direction of the semiconductor substrate to form a second dopant layer. Between the first and second dopant layers, a third dopant layer of a second conductive type is formed. Over the first, second, and third dopant layers in the second conductive area, a fourth dopant layer of the second conductive type is formed. COPYRIGHT: (C)2005,JPO&NCIPI
|
