| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which a gate insulating film is formed on a semiconductor substrate only by one time of a film formation process and gate electrodes having conductive materials of different job functions are then formed. SOLUTION: The method of manufacturing the semiconductor device includes steps of: forming the gate insulating film on the semiconductor substrate having a first device region and a second device region, forming a masking all over the surface and then selectively etching the masking to form an opening for exposing a portion of the gate insulating film positioned in the first device region; forming a first conductive material film all over the masking including the opening, patterning it to form the patterned first conductive material film at least in the portion of the gate insulating film positioned in the first device region and then removing the exposed masking by etching; forming a second conductive material film having a job function different from that of the first conductive material film on the gate insulating film including the patterned first conductive material film; and forming a first gate electrode including the first conductive material film on the gate insulating film in the first device region, and forming a second gate electrode composed of the second conductive material film on the gate insulating film in the second device region. COPYRIGHT: (C)2005,JPO&NCIPI
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