| 摘要 |
PROBLEM TO BE SOLVED: To provide an ashing method wherein, even if Ru is used for the electrode material of a semiconductor device, Ru is not adversely affected during ashing, and also to provide a method of manufacturing the semiconductor device using the ashing method. SOLUTION: In ashing by oxygen plasmas for removing a resist which was used for a mask when forming the bottom electrode 19 of a ferroelectric capacitor formed in a semiconductor substrate 1 by using an Ru film, the inside pressure of the chamber 31 of a plasma processing apparatus is kept at 70 Pa or above and the temperature of the semiconductor substrate 1 is kept at 100°C or less. COPYRIGHT: (C)2005,JPO&NCIPI
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